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IC43R16320B-6TL 参数 Datasheet PDF下载

IC43R16320B-6TL图片预览
型号: IC43R16320B-6TL
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 48 页 / 839 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS43R16320B  
IC43R16320B  
Auto-refresh command [REF]  
This command executes auto-refresh. The banks and the ROW addresses to be refreshed are internally determined  
by the internal refresh controller. The average refresh cycle is 7.8 μs. The output buffer becomes high-Z after auto-  
refresh start. Precharge has been completed automatically after the auto-refresh. The ACT or MRS command can  
be issued tRFC after the last auto-refresh command.  
Self-refresh entry [SELF]  
This command starts self-refresh. The self-refresh operation continues as long as CKE is held low. During the self-  
refresh operation, all ROW addresses are repeated refreshing by the internal refresh controller. A self-refresh is  
terminated by a self-refresh exit command.  
Power down mode entry [PDEN]  
tPDEN (= 1 cycle) after the cycle when [PDEN] is issued. The DDR SDRAM enters into power-down mode. In  
power down mode, power consumption is suppressed by deactivating the input initial circuit. Power down mode  
continues while CKE is held low. No internal refresh operation occurs during the power down mode. [PDEN] do not  
disable DLL.  
Self-refresh exit [SELFX]  
This command is executed to exit from self-refresh mode. To issue non-read commands, tSNR has to be  
satisfied.To issue read command, tSRD has to be satisfied to adjust DOUT timing by DLL. (200 cycles after  
[SELFX]) After the exit, input auto-refresh command within 7.8 μs.  
Power down exit [PDEX]  
The DDR SDRAM can exit from power down mode tPDEX (1 cycle min.) after the cycle when [PDEX] is issued.  
20  
Integrated Silicon Solution, Inc. — www.issi.com  
Rev. 00B  
06/11/08  
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