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IC41LV8512-60K 参数 Datasheet PDF下载

IC41LV8512-60K图片预览
型号: IC41LV8512-60K
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM, 512KX8, 60ns, CMOS, PDSO28, 0.400 INCH, SOJ-28]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 21 页 / 202 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IC41C8512  
IC41LV8512  
ABSOLUTE MAXIMUM RATINGS(1)  
Symbol Parameters  
Rating  
Unit  
VT  
Voltage on Any Pin Relative to GND  
5V  
3.3V  
–1.0 to +7.0  
–0.5 to +4.6  
V
VCC  
Supply Voltage  
5V  
3.3V  
–1.0 to +7.0  
–0.5 to +4.6  
V
IOUT  
PD  
Output Current  
50  
1
mA  
W
Power Dissipation  
TA  
Commercial Operation Temperature  
Industrial Operationg Temperature  
0 to +70  
–40 to +85  
°C  
°C  
TSTG  
Storage Temperature  
–55 to +125  
°C  
Note:  
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent  
damage to the device. This is a stress rating only and functional operation of the device at these  
or any other conditions above those indicated in the operational sections of this specification is  
not implied. Exposure to absolute maximum rating conditions for extended periods may affect  
reliability.  
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Unit  
VCC  
Supply Voltage  
5V  
3.3V  
4.5  
3.0  
5.0  
3.3  
5.5  
3.6  
V
VIH  
VIL  
TA  
Input High Voltage  
Input Low Voltage  
5V  
3.3V  
2.4  
2.0  
VCC + 1.0  
VCC + 0.3  
V
V
5V  
3.3V  
–1.0  
–0.3  
0.8  
0.8  
Commercial Ambient Temperature  
Industrial Ambient Temperature  
0
–40  
70  
85  
°C  
°C  
CAPACITANCE(1,2)  
Symbol  
Parameter  
Max.  
Unit  
CIN1  
CIN2  
CIO  
Input Capacitance: A0-A9  
5
7
7
pF  
pF  
pF  
Input Capacitance: RAS, CAS, WE, OE  
Data Input/Output Capacitance: I/O0-I/O7  
Notes:  
1. Tested initially and after any design or process changes that may affect these parameters.  
2. Test conditions: TA = 25°C, f = 1 MHz.  
6
Integrated Circuit Solution Inc.  
DR029-0A 09/28/2001