欢迎访问ic37.com |
会员登录 免费注册
发布采购

AS7C332MNTD18A-167TQIN 参数 Datasheet PDF下载

AS7C332MNTD18A-167TQIN图片预览
型号: AS7C332MNTD18A-167TQIN
PDF下载: 下载PDF文件 查看货源
内容描述: [ZBT SRAM, 2MX18, 7.5ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 22 页 / 452 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
 浏览型号AS7C332MNTD18A-167TQIN的Datasheet PDF文件第10页浏览型号AS7C332MNTD18A-167TQIN的Datasheet PDF文件第11页浏览型号AS7C332MNTD18A-167TQIN的Datasheet PDF文件第12页浏览型号AS7C332MNTD18A-167TQIN的Datasheet PDF文件第13页浏览型号AS7C332MNTD18A-167TQIN的Datasheet PDF文件第15页浏览型号AS7C332MNTD18A-167TQIN的Datasheet PDF文件第16页浏览型号AS7C332MNTD18A-167TQIN的Datasheet PDF文件第17页浏览型号AS7C332MNTD18A-167TQIN的Datasheet PDF文件第18页  
AS7C332MNTD18A  
®
3.3V VDD, TAP DC electrical characteristics and operating conditions  
o
o
(+10 C < T < +110 C and +3.135V < V < +3.465V unless otherwise noted)  
J
DD  
Description  
Input high (logic 1) voltage  
Input low (logic 0) voltage  
Input leakage current  
Conditions  
Symbol  
VIH  
Min  
2.0  
Max  
VDD + 0.3  
0.8  
Units  
V
Notes  
1, 2  
VIL  
-0.3  
-5.0  
V
1, 2  
0V VIN VDD  
ILI  
5.0  
µA  
Outputs disabled,  
0V VIN VDDQ(DQx)  
Output leakage current  
ILO  
-5.0  
5.0  
µA  
Output low voltage  
Output low voltage  
Output high voltage  
Output high voltage  
IOLC = 100µA  
IOLT = 2mA  
VOL1  
VOL2  
VOH1  
VOH2  
0.7  
0.8  
V
V
V
V
1
1
1
1
IOHS = -100µA  
IOHT = -2mA  
2.9  
2.0  
2.5V VDD, TAP DC electrical characteristics and operating conditions  
o
o
(+10 C < T < +110 C and +2.4V < V < +2.6V unless otherwise noted)  
J
DD  
Description  
Input high (logic 1) voltage  
Input low (logic 0) voltage  
Input leakage current  
Conditions  
Symbol  
VIH  
Min  
1.7  
Max  
VDD + 0.3  
0.7  
Units  
V
Notes  
1, 2  
VIL  
-0.3  
-5.0  
V
1, 2  
0V VIN VDD  
ILI  
5.0  
µA  
Outputs disabled,  
0V VIN VDDQ(DQx)  
Output leakage current  
ILO  
-5.0  
5.0  
µA  
Output low voltage  
Output low voltage  
Output high voltage  
Output high voltage  
IOLC = 100µA  
IOLT = 2mA  
VOL1  
VOL2  
VOH1  
VOH2  
0.2  
0.7  
V
V
V
V
1
1
1
1
IOHS = -100µA  
IOHT = -2mA  
2.1  
1.7  
1. All voltage referenced to V (GND).  
SS  
t
2. Overshoot: V (AC) V + 1.5V for t KHKH/2  
IH  
DD  
t
Undershoot:V (AC) -0.5 for t KHKH/2  
IL  
Power-up: V +2.6V and V 2.4V and V 1.4V for t 200ms  
DDQ  
IH  
DD  
During normal operation, V  
must not exceed V . Control input signals (such as LD, R/W, etc.) may not have pulsed  
DD  
DDQ  
widths less than t  
(Min) or operate at frequencies exceeding f (Max).  
KF  
KHKL  
Identification register definitions  
Instruction field  
Revision number (31:28)  
Device depth (27:23)  
2M x 18  
xxxx  
Description  
Reserved for version number.  
xxxxx/xxxxx  
xxxxx/xxxxx  
xxxxxx  
Defines the depth of 1M words.  
Defines the width of x18 bits.  
Device width (22:18)  
Device ID (17:12)  
Reserved for future use.  
JEDEC ID code (11:1)  
00000110100  
1
Allows unique identification of SRAM vendor.  
Indicates the presence of an ID register.  
ID register presence indicator (0)  
4/26/04, V 1.2  
Alliance Semiconductor  
P. 14 of 22  
 复制成功!