AS7C33256NTF32A
AS7C33256NTF36A
®
DC electrical characteristics for 3.3V I/O operation
Parameter
Input leakage current1
Output leakage current
Sym
|ILI|
Conditions
VDD = Max, 0V < VIN < VDD
OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
Address and control pins
I/O pins
Min
-2
Max
Unit
µA
2
|ILO
|
-2
2*
2*
-0.3**
-0.5**
2.4
–
2
VDD+0.3
VDDQ+0.3
0.8
µA
Input high (logic 1) voltage
Input low (logic 0) voltage
VIH
V
V
Address and control pins
I/O pins
VIL
0.8
Output high voltage
Output low voltage
VOH
VOL
IOH = –4 mA, VDDQ = 3.135V
IOL = 8 mA, VDDQ = 3.465V
–
V
V
0.4
1 LBO, and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10 µA.
DC electrical characteristics for 2.5V I/O operation
Parameter
Input leakage current
Output leakage current
Sym
|ILI|
Conditions
VDD = Max, 0V < VIN < VDD
OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
Address and control pins
I/O pins
Min
-2
Max
Unit
2
µA
µA
V
|ILO
|
-2
2
VDD+0.3
VDDQ+0.3
0.7
1.7*
1.7*
-0.3**
-0.3**
1.7
Input high (logic 1) voltage
Input low (logic 0) voltage
VIH
V
Address and control pins
I/O pins
V
VIL
0.7
V
Output high voltage
Output low voltage
VOH
VOL
IOH = –4 mA, VDDQ = 2.375V
IOL = 8 mA, VDDQ = 2.625V
–
V
–
0.7
V
*VIH max < VDD +1.5V for pulse width less than 0.2 X tCYC
**
V
min = -1.5 for pulse width less than 0.2 X tCYC
IL
I
operating conditions and maximum limits
DD
Parameter
Sym
Conditions
-75
-85
-10 Unit
CE0 < VIL, CE1 > VIH, CE2 < VIL, f = fMax
,
Operating power supply current1
ICC
280
240
300
mA
IOUT = 0 mA, ZZ < VIL
All VIN ≤ 0.2V or >
V
– 0.2V, Deselected,
DD
ISB
110
100
120
f = fMax, ZZ < VIL
Deselected, f = 0, ZZ < 0.2V,
all VIN ≤ 0.2V or ≥ VDD – 0.2V
Standby power supply current
mA
ISB1
ISB2
30
30
30
30
30
30
Deselected, f = f , ZZ
≥
V
– 0.2V,
Max
DD
all VIN ≤ VIL or ≥ VIH
1 I given with no output loading. I increases with faster cycle times and greater output loading.
CC
CC
11/8/04, v. 1.1
Alliance Semiconductor
P. 8 of 18
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
