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AS7C331MPFS18A-225BI 参数 Datasheet PDF下载

AS7C331MPFS18A-225BI图片预览
型号: AS7C331MPFS18A-225BI
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 1MX18, 6.9ns, CMOS, PBGA165, BGA-165]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 21 页 / 411 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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AS7C331MPFS18A  
®
Reserved  
Do not use a reserved instruction.These instructions are not implemented but are reserved for future use.  
TAP timing diagram  
.
7
2
6
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TAP AC electrical characteristics  
o
o
For notes 1 and 2, +10 C < T < +110 C and +2.4V < V < +2.6V.  
J
DD  
Description  
Symbol  
Min Max Units  
Clock  
Clock cycle time  
Clock frequency  
Clock high time  
Clock low time  
Output Times  
tTHTH  
fTF  
tTHTL  
tTLTH  
100  
ns  
10 MHz  
ns  
40  
40  
ns  
TCK low to TDO unknown  
TCK low to TDO valid  
TDI valid to TCK high  
TCK high to TDI invalid  
Setup Times  
tTLOX  
tTLOV  
tDVTH  
tTHDX  
0
ns  
20  
ns  
ns  
ns  
10  
10  
TMS setup  
tMVTH  
1
tCS  
10  
10  
ns  
ns  
Capture setup  
Hold Times  
TMS hold  
tTHMX  
tCH1  
10  
10  
ns  
ns  
Capture hold  
t
t
1 CS and CH refer to the setup and hold time requirements of latching data  
from the boundary scan register.  
2
Test conditions are specified using the load in the figure TAP AC output  
load equivalent.  
12/ 2/ 02, v. 0.9.2 Advance Info  
Alliance Semiconductor  
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