AS7C331MPFS18A-200TQC 参数 Datasheet PDF下载

AS7C331MPFS18A

®

DC electrical characteristics for 3.3V I/O operation

Parameter

Input leakage

current

1

Output leakage

current

Operating power

supply current

2

Operating power

supply current

2

Sym

|I

LI

|

|I

LO

|

I

CC

(Pipelined)

Test conditions

V

DD

= Max, V

IN

= GND to V

DD

OE

≥

V

IH

, V

DD

= Max,

V

OUT

= GND to V

DD

CE0 = V

IL

, CE1 = V

IH

, CE2 = V

IL

,

f = f

Max

, I

OUT

= 0 mA

Deselected, f = f

Max

, ZZ

≤

V

IL

Deselected, f = 0, ZZ

≤

0.2V

all V

IN

≤

0.2V or

≥

V

DD

– 0.2V

Deselected, f = f

Max

, ZZ

≥

V

DD

– 0.2V

All V

IN

≤

V

IL

or

≥

V

IH

I

OL

= 8 mA, V

DDQ

= 3.465V

I

OH

= –4 mA, V

DDQ

= 3.135V

–200

–166

–133

Min Max Min Max Min Max Unit

-2

-2

–

–

–

–

–

–

2.4

2

2

370

320

130

70

60

0.4

–

-2

-2

–

–

–

–

–

–

2.4

2

2

340

275

120

70

60

0.4

–

-2

-2

–

–

–

–

–

–

2.4

2

2

320

250

110

70

60

0.4

–

V

mA

µA

µA

mA

mA

I

CC

(Flow-through)

I

SB

Standby power

supply current

I

SB1

I

SB2

Output voltage

V

OL

V

OH

1 LBO, FTX, and ZZX pins and the 165 BGA JTAG pins (TMSX, TDIX, and TCKX) have an internal pull-up, and input leakage = ±10

µa.

2 I

CC

given with no output loading. I

CC

increases with faster cycle times and greater output loading.

DC electrical characteristics for 2.5V I/O operation

Parameter

Output leakage

current

Output voltage

Sym

|I

LO

|

V

OL

V

OH

Test conditions

OE

≥

V

IH

, V

DD

= Max,

V

OUT

= GND to V

DD

I

OL

= 2 mA, V

DDQ

= 2.65V

I

OH

= –2 mA, V

DDQ

= 2.35V

–200

Min Max

–1

–

1.7

1

0.7

–

–166

Min Max

–1

–

1.7

1

0.7

–

–133

Min Max

–1

–

1.7

1

0.7

–

Unit

µA

V

5/28/03, v. 052003 Advance Info

Alliance Semiconductor

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