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66WVC2M16ALL-7010BLI 参数 Datasheet PDF下载

66WVC2M16ALL-7010BLI图片预览
型号: 66WVC2M16ALL-7010BLI
PDF下载: 下载PDF文件 查看货源
内容描述: [2M X 16 PSEUDO STATIC RAM, 70 ns, PBGA54, 8 X 6 MM, MO-207, VFBGA-54]
分类和应用:
文件页数/大小: 67 页 / 1471 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS66WVC2M16ALL  
Advanced Information  
Signal Descriptions  
All signals for the device are listed below in Table 1.  
Table 1. Signal Descriptions  
Symbol  
VDD  
Type  
Description  
Core Power supply (1.7V~1.95V)  
Power Supply  
Power Supply  
Power Supply  
Power Supply  
VDDQ  
VSS  
I/O Power supply (1.7V~1.95V)  
All VSS supply pins must be connected to Ground  
All VSSQ supply pins must be connected to Ground  
VSSQ  
DQ0~DQ15 Input / Output Data Inputs/Outputs (DQ0~DQ15)  
A0~A20  
LB#  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Address Input(A0~A20)  
Lower Byte select  
Upper Byte select  
Chip Enable/Select  
Output Enable  
UB#  
CE#  
OE#  
WE#  
CRE  
Write Enable  
Control Register Enable: When CRE is HIGH, READ and WRITE operations  
access registers.  
ADV#  
Input  
Address Valid signal  
Indicates that a valid address is present on the address inputs. Address  
can be latched on the rising edge of ADV# during asynchronous Read and  
Write operations. ADV# can be held LOW during asynchronous Read and  
Write operations.  
CLK  
Input  
Clock  
Latches addresses and commands on the first rising CLK edge when  
ADV# is active in synchronous mode. CLK must be kept static Low during  
asynchronous Read/Write operations and Page Read access operations.  
WAIT  
Output  
WAIT  
Data valid signal during burst Read/Write operation. WAIT is used to  
arbitrate collisions between refresh and Read/Write operation. WAIT is  
also asserted at the end of a row unless wrapping within the burst length.  
WAIT is asserted and should be ignored during asynchronous and page  
mode operation. WAIT is gated by CE# and is high-Z when CE# is high.  
4
www.issi.com – SRAM@issi.com  
Rev.00B | March 2010  
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