IS62C1024L
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–65 to +150
1.5
20
Unit
V
°C
W
mA
ISSI
®
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 5.0V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
DD
= Min., I
OH
= –1.0 mA
V
DD
= Min., I
OL
= 2.1 mA
Min.
2.4
—
2.2
–0.3
–2
–10
–2
–10
Max.
—
0.4
V
DD
+ 0.5
0.8
2
10
2
10
Unit
V
V
V
V
µA
µA
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
Com.
Ind.
Com.
Ind.
Notes:
1. V
IL
= –3.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. E
11/26/03
3