IS61NLP12832B
IS61NLP12836B/IS61NVP12836B
IS61NLP25618A/IS61NVP25618A
DC ELECTRICAL CHARACTERISTICS (OverꢀOperatingꢀRange)
3.3V
2.5V
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
Vo h
OutputꢀHIGHꢀVoltageꢀ
Io h = –4.0ꢀmAꢀ (3.3V)ꢀ
Io h = –1.0ꢀmA (2.5V)
2.4ꢀ
—ꢀ
2.0ꢀ
—ꢀ
V
Vo l
OutputꢀLOWꢀVoltageꢀ
Io l = 8.0ꢀmA (3.3V)ꢀ
Io l = 1.0 mA (2.5V)
—ꢀ
0.4ꢀ
—ꢀ
0.4ꢀ
V
(1)
VIh
InputꢀHIGHꢀVoltageꢀꢀ
InputꢀLOWꢀVoltage
ꢀ
2.0ꢀ
–0.3ꢀ
–5ꢀ
Vd d + 0.3
1.7
–0.3ꢀ
–5ꢀ
Vd d + 0.3
V
V
(1)
VIl
ꢀ
0.8ꢀ
5ꢀ
0.7ꢀ
5ꢀ
Il I
InputꢀLeakageꢀCurrentꢀ
OutputꢀLeakageꢀCurrent
VS S ≤ VIn ≤ Vd d (1)ꢀ
µA
µA
Il o
VS S ≤ Vo u T ≤ Vd d q , OE = VIhꢀ
–5ꢀ
5ꢀ
–5ꢀ
5ꢀ
Note:
1.ꢀOvershoot:ꢀVIhꢀ(AC)ꢀ<ꢀVd d ꢀ+ꢀ2.0Vꢀ(Pulseꢀwidthꢀlessꢀthanꢀtk c /2).ꢀUndershoot:ꢀVIlꢀ(AC)ꢀ>ꢀ-2Vꢀ(Pulseꢀwidthꢀlessꢀthanꢀtk c /2).
POWER SUPPLY CHARACTERISTICS(1) (OverꢀOperatingꢀRange)
-250
MAX
-200
MAX
Symbol Parameter
Test Conditions
Temp. ranꢀe
x18
x32/x36
x18 x32/x36
Uni
t
Ic c
ACꢀOperatingꢀ
Supply Current
DeviceꢀSelected,ꢀꢀ
OE = VIh, ZZ ≤ VIl,
Com.ꢀ
Ind.
225ꢀ ꢀ 225ꢀ
250ꢀ ꢀ 250ꢀ
ꢀ
ꢀ
200ꢀ ꢀ 200ꢀ
210ꢀ ꢀ 210ꢀ
ꢀ
mA
All Inputs ≤ 0.2V or ≥ Vd d – 0.2V,
CycleꢀTimeꢀ≥ tk c min.
ꢀ ꢀ
ꢀ
IS b
ꢀ ꢀ
Standby Current
TTLꢀInputꢀ
Device Deselected,
Vd d = Max.,ꢀ
All Inputs ≤ VIl or ≥ VIh,
ZZ ≤ VIl, fꢀ=ꢀMax.
Com.
Ind.ꢀ
90
90
90
90
mA
100ꢀ ꢀ 100ꢀ
ꢀ
ꢀ
100ꢀ ꢀ 100ꢀ
IS b I
Standby Current
cMoS Input
ꢀ
Device Deselected,
Com.
Ind.ꢀ
70
75ꢀ
ꢀ
70
75ꢀ
70
70
mA
Vd d = Max.,ꢀ
ꢀ
40
75ꢀ ꢀ 75ꢀ
ꢀ ꢀ
ꢀ ꢀ
VIn
≤
ꢀVS S +ꢀ0.2Vꢀorꢀ≥Vd d –ꢀ0.2Vꢀ typ.(2)
ꢀ
ꢀ
ꢀfꢀ=ꢀ0
IS b 2
ꢀ ꢀ
SleepꢀModeꢀ
ꢀ
ZZ>VIh
ꢀ
Com.
Ind.ꢀ
30
35ꢀ
30
35ꢀ
30
30
mA
ꢀ
ꢀ
20
ꢀ
35ꢀ ꢀ 35ꢀ
ꢀ
typ.(2)
Note:
1.ꢀ MODEꢀpinꢀhasꢀanꢀinternalꢀpullupꢀandꢀshouldꢀbeꢀtiedꢀtoꢀVd d ꢀorꢀVS S .ꢀItꢀexhibitsꢀ±100µAꢀmaximumꢀleakageꢀcurrentꢀwhenꢀtiedꢀtoꢀ≤
VS S ꢀ+ꢀ0.2Vꢀorꢀ≥ꢀVd d ꢀ–ꢀ0.2V.
2.ꢀꢀTypicalꢀvaluesꢀareꢀmeasuredꢀatꢀVd d ꢀ=ꢀ3.3V,ꢀTA =ꢀ25oCꢀandꢀnotꢀ100%ꢀtested.
14
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
09/10/07
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
