INCHANGE Semiconductor
isc
Product Specification
isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
STP75NF75
MIN
MAX
UNIT
V
(BR)DSS
Drain-Source Breakdown Voltage
V
GS
= 0; I
D
= 0.25mA
75
V
V
GS
(th
)
Gate Threshold Voltage
V
DS
= V
GS
; I
D
= 0.25mA
2
4
V
R
DS(
on
)
Drain-Source On-Resistance
V
GS
= 10V; I
D
= 40A
0.011
Ω
I
GSS
Gate-Body Leakage Current
V
GS
=
±20V;V
DS
= 0
V
DS
= 75V; V
GS
= 0
V
DS
= 75V; V
GS
= 0; T
j
= 125℃
I
S
= 80A; V
GS
=0
±100
1
10
1.5
nA
I
DSS
Zero Gate Voltage Drain Current
μA
V
SD
Forward On-Voltage
V
·
isc Website:www.iscsemi.cn