INCHANGE Semiconductor
isc
Product Specification
isc N-Channel MOSFET Transistor
STP75NF75
FEATURES
·Drain
Current –I
D
= 80A@ T
C
=25℃
·Drain
Source Voltage-
: V
DSS
= 75V(Min)
·Static
Drain-Source On-Resistance
: R
DS(on)
= 0.011Ω(Max)
DESCRIPTION
Suitable as primary switch in advanced high-efficiency, high-
frequency isolated DC-DC converters for Telecom and Computer
applications. It is also intended for any application with low gate
drive requirements .
APPLICATIONS
·Solenoid
and relay drivers
·DC
motor control
·DC-DC
converters DC
·Automotive
environment
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
I
DM
P
D
T
J
T
stg
PARAMETER
Drain-Source Voltage
Gate-Source Voltage-Continuous
Drain Current-Continuous
Drain Current-Single Pluse (t
p
≤10μs)
Total Dissipation @T
C
=25℃
Max. Operating Junction Temperature
Storage Temperature
VALUE
75
±20
80
320
300
175
-55~175
UNIT
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
0.5
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
