Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUY69A BUY69B BUY69C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
400
325
200
1000
800
500
TYP.
MAX
UNIT
BUY69A
BUY69B
BUY69C
BUY69A
BUY69B
BUY69C
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=100mA ; IB=0
V
VCBO
Collector-base voltage
IC=1mA; IE=0
V
VCEsat
VBEsat
ICES
IEBO
hFE
Collector-emitter saturation voltage IC=8A ;IB=2.5A
3.3
2.2
1.0
1.0
V
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=8A ;IB=2.5A
VCE=rated VCES; VBE=0
VEB=8V; IC=0
mA
mA
IC=2.5A ; VCE=10V
IC=0.5A ; VCE=10V;f=1MHz
15
10
fT
Transition frequency
MHz
Switching times
tr
ts
tf
Rise time
0.3
1.8
1.0
μs
μs
μs
IC=5A ;IB1=-IB2=1.0A; VCC=250V
Storage time
Fall time
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
