Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUY69A BUY69B BUY69C
DESCRIPTION
·With TO-3 package
·High voltage capability
APPLICATIONS
·For horizontal deflection output stage
of CTV receivers and high voltalge,
fast switching and industrial applications
PINNING (See Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
1000
800
500
400
325
200
8
UNIT
BUY69A
BUY69B
BUY69C
BUY69A
BUY69B
BUY69C
VCBO
Collector-base voltage
Open emitter
V
Collector-emitter
sustaining voltage
VCEO(SUS)
Open base
V
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
V
A
10
Collector current-peak
Base current
15
A
3.0
A
PD
Tj
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
100
200
-65~200
W
℃
℃
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance from junction to case
MAX
UNIT
Rth j-c
1.75
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
