Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD669 2SD669A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
120
160
180
180
5
TYP.
MAX
UNIT
2SD669
2SD669A
2SD669
2SD669A
Collector-emitter
breakdown voltage
V(BR)CEO
IC=10mA; RBE=∞
V
Collector-base
breakdown voltage
V(BR)CBO
IC=1m A ;IE=0
IE=1mA ;IC=0
V
V(BR)EBO
VCEsat
VBE
Emitter-base breakdown voltage
V
V
Collector-emitter saturation voltage IC=0.5A ;IB=50mA
1.0
1.5
10
Base-emitter on voltage
Collector cut-off current
IC=150mA ; VCE=5V
VCB=160V; IE=0
V
ICBO
μA
2SD669
60
60
30
320
200
hFE-1
DC current gain
IC=150mA ; VCE=5V
2SD669A
hFE-2
fT
DC current gain
IC=0.5A ; VCE=5V
IC=150mA ; VCE=5V
f=1MHz ; VCB=10V
Transition frequency
140
14
MHz
pF
COB
Collector output capacitance
hFE Classifications
hFE-1
B
C
D
2SB649
2SB649A
60-120
60-120
100-200
100-200
160-320
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
