Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD669 2SD669A
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SB649/649A
·High breakdown voltage VCEO:120/160V
·High current 1.5A
·Low saturation voltage,excellent hFE linearity
APPLICATIONS
·For low-frequency power
amplifier applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
180
180
120
160
5
UNIT
2SD669
2SD669A
2SD669
2SD669A
VCBO
Collector-base voltage
Open emitter
V
VCEO
Collector-emitter voltage
Open base
V
VEBO
IC
Emitter-base voltage
Collector current (DC)
Collector current-peak
Open collector
V
A
A
1.5
ICM
3
Ta=25℃
TC=25℃
1
PD
Total power dissipation
W
20
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
