Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1184
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
CONDITIONS
MIN
-120
-5
TYP.
MAX
UNIT
V
IC=-10mA; IB=0
IE=-10μA; IC=0
V
IC=-500mA; IB=-50mA
IC=-500mA ; VCE=-5V
VCB=-120V; IE=0
-1.0
-1.0
-1
V
V
ICBO
μA
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1
hFE
DC current gain
IC=-100mA ; VCE=-5V
IC=-0.1A ; VCE=5V
80
240
fT
Transition frequency
120
MHz
2
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