Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1184
DESCRIPTION
·
·With TO-126 package
·High breakdown voltage
APPLICATIONS
·Audio frequency power amplifier
·High frequency power amplifier
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-120
-120
-5
UNIT
Open emitter
Open base
V
V
V
A
A
Open collector
-1
IB
Base current
-0.1
Ta=25℃
TC=25℃
1.5
PD
Total power dissipation
W
15
Tj
Junction temperature
Storage temperature
150
℃
℃
Tstg
-55~+150