Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5038 2N5039
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
90
TYP
MAX
UNIT
2N5038
2N5039
2N5038
2N5039
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.2A ;IB=0
V
75
IC=12A ;IB=1.2A
IC=10A ;IB=1A
IC=20A ;IB=5A
IC=20A ;IB=5A
IC=12A ; VCE=5V
IC=10A ; VCE=5V
VCE=70V; IB=0
VCE=55V; IB=0
Collector-emitter
saturation voltage
VCEsat-1
1.0
V
VCEsat-2
VBEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
2.5
3.3
V
V
2N5038
Base-emitter on voltage
2N5039
VBE
ICEO
ICEX
1.8
20
V
2N5038
Collector cut-off current
2N5039
mA
mA
mA
V
CE=140V; VBE=-1.5V
VCE=100V; VBE=-1.5V ;TC=150℃
CE=110V; VBE=-1.5V
5.0
10
2N5038
Collector cut-off current
2N5039
V
5.0
10
VCE=85V; VBE=-1.5V TC=150℃
2N5038
Emitter cut-off current
2N5039
5
IEBO
hFE-1
hFE-2
Is/b
VEB=5V; IC=0
15
DC current gain
IC=2A ; VCE=5V
IC=12A ; VCE=5V
IC=10A ; VCE=5V
50
20
250
2N5038
DC current gain
100
2N5039
VCE=28V,
5
0.9
Second breakdown collector current
A
VCE=45V(t=1.0s Nonrepetitive)
Switching times
tr
ts
tf
Rise time
0.5
1.5
0.5
μs
μs
μs
For 2N5038
IC=12A ;IB1=- IB2=1.2A ;VCC=30V
For 2N5039
Storage time
Fall time
IC=10A ;IB1=- IB2=1A ;Vcc=30V
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
