Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5038 2N5039
DESCRIPTION
·With TO-3 package
·High speed
·Low collector saturation voltage
APPLICATIONS
·They are especially intended for high current
and fast switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
150
120
90
UNIT
2N5038
2N5039
2N5038
2N5039
VCBO
Collector-base voltage
Open emitter
Open base
V
VCEO
Collector-emitter voltage
V
75
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
7
V
A
20
Collector current-peak
Base current
30
A
5
A
PD
Tj
Total Power Dissipation
Junction temperature
Storage temperature
TC=25℃
140
200
-65~200
W
℃
℃
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
MAX
UNIT
Rth j-c
1.25
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
