PRELIMINARY
※This
datasheet is possibility of change.
Because this device is developing now.
ISC6053AU1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE
200
10000
DC FORWARD CURRENT GAIN VS.
COLLECTOR CURRENT
VCE=4V
DC FORWARD CURRENT GAIN hFE(-)
COLLECTOR DISSIPATION Pc(mW)
150
1000
85℃
25℃
100
100
-40℃
50
0
0
50
100
150
10
1
10
100
1000
AMBIENT TEMPERATURE Ta(℃)
COLLECTOR CURRENT IC (mA)
COMMON EMITTER TRANSFER(1)
COMMON EMITTER TRANSFER(2)
700
VCE=4V
600
COLLECTOR CURRENT IC(mA)
10
VCE=4V
500
400
300
-40℃
200
100
0
0
0.2
0.4
0.6
0.8
1
1.2
25℃
COLLECTOR CURRENT IC(mA)
85℃
8
85℃
6
25℃
4
-40℃
2
0
0
0.2
0.4
0.6
0.8
1
1.2
BASE TO EMITTER VOLTAGE VBE (V)
BASE TO EMITTER VOLTAGE VBE (V)
COMMON EMITTER OUTPUT(1)
COMMON EMITTER OUTPUT(2)
800
700
COLLECTOR CURRENT IC(mA)
IB=10mA
IB=9mA
IB=8mA
IB=7mA
IB=6mA
400
IB=1.0mA
IB=0.9mA
IB=0.8mA
IB=0.7mA
Ta=25℃
Ta=25℃
350
COLLECTOR CURRENT IC(mA)
600
500
IB=4mA
300
250
200
IB=0.6mA
IB=0.5mA
IB=0.4mA
IB=5mA
IB=0.3mA
400
IB=2mA
IB=3mA
IB=0.2mA
300
IB=1mA
150
100
IB=0.1mA
200
100
0
0
1
2
3
4
5
IB=0mA
50
IB=0mA
0
0
5
10
15
20
COLLECTOR TO EMITTER VOLTAGE VCE(V)
COLLECTOR TO EMITTER VOLTAGE VCE(V)
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
