PRELIMINARY
※This
datasheet is possibility of change.
Because this device is developing now.
ISC6053AU1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
ISC6053AU1 is a silicon NPN epitaxial type transistor
Designed with high collector current, low V
CE(sat).
OUTLINE DRAWING
1.5
0.35
0.8
0.35
Unit：mm
0.5
0.22
①
③
1.7
1.0
0.5
FEATURE
●High collector current
I
C（MAX）
=650mA
●Low collector to emitter saturation voltage
V
CE（sat）
<0.5V
max
②
0.7
0.55
APPLICATION
For switching application, small type motor drive application.
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
0½0.1
JEITA：SC-75A
JEDEC： －
MAXIMUM RATINGS（Ta=25℃）
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
20
25
4
650
150
150
-55½150
Unit
V
V
V
mA
mW
℃
℃
MARKING
Type Name
hFE ITEM
・ BG
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
V
（BR）CEO
V
（BR）CBO
V
（BR）EBO
I
CBO
I
EBO
h
FE
※
V
CE（sat）
f
T
Parameter
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain band width product
Test condition
I
C
=100uA, I
B
=0
I
C
=10uA, I
E
=0
I
E
=10uA, I
C
=0
V
CB
=25V, I
E
=0
V
EB
=2V, I
C
=0
V
CE
=4V,I
C
=100mA
I
C
=500mA, I
B
=25mA
V
CE
=6V,I
E
=-10mA,
ITEM
hFE
Min
20
25
4
－
－
150
－
－
Limits
Typ
－
－
－
－
－
－
0.3
290
E
150½300
0.12
0.32
Max
－
－
－
1
1
800
0.5
－
F
250½500
Unit
V
V
V
uA
uA
－
V
MHz
G
400½800
*：It shows hFE classification in below table.
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
