PRELIMINARY
※This
datasheet is possibility of change.
Because this device is developing now.
ISA2166AU1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE
200
COMMON EMITTER OUTPUT
-100
IB=-500uA
Ta=25℃
IB=-400uA
COLLECTOR CURRENT IC(mA)
COLLECTOR DISSIPATION Pc(mW)
150
-80
IB=-300uA
-60
IB=-200uA
-40
IB=-100uA
-20
IB=0uA
100
50
0
0
50
100
150
-0
-0
-2
-4
-6
-8
-10
COLLECTOR TO EMITTER VOLTAGE VCE(V)
GAIN BAND WIDTH PRODUCT VS.
EMITTER CURRENT
500
AMBIENT TEMPERATURE Ta(℃)
DC FORWARD CURRENT GAIN VS.
COLLECTOR CURRENT
10000
DC FORWARD CURRENT GAIN hFE(-)
GAIN BAND WIDTH PRODUCT fT(MHz)
VCE=-10V
Ta=25℃
VCE=-20V
400
1000
25℃
85℃
300
200
100
-40℃
100
10
-0.1
-1
-10
-100
COLLECTOR CURRENT IC(mA)
-1000
0
1
10
100
EMITTER CURRENT IE(mA)
1000
COMMON EMITTER TRANSFER
COLLECTOR OUTPUT CAPACITANCE VS.
COLLECTOR TO BASE VOLTAGE
VCE=-10V
COLLECTOR OUTPUT CAPACITANCE Cob(pF)
-500
100
Ta=25℃
IE=0
f=1MHz
COLLECTOR CURRENT IC(mA)
-400
85℃
-300
10
-200
25℃
-40℃
-100
-0
-0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
BASE TO EMITTER VOLTAGE VBE(V)
1
-0.1
-1
-10
-100
COLLECTOR TO BASE VOLTAGE VCB(V)
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
