PRELIMINARY
※This
datasheet is possibility of change.
Because this device is developing now.
ISA2166AU1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA2166AU1 is a silicon PNP epitaxial type transistor
Designed with high collector current, low V
CE(sat).
OUTLINE DRAWING
1.5
0.35
0.8
0.35
Unit：mm
0.5
0.22
①
③
0.5
FEATURE
●High collector current
I
C（MAX）
=-500mA
●Low collector to emitter saturation voltage
V
CE（sat）
<-0.4V
max
(I
C
=-150mA, I
B
=-15mA）
1.7
1.0
②
0.7
0.55
APPLICATION
For switching application, small type motor drive application.
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
0½0.1
JEITA：SC-75A
JEDEC： －
MAXIMUM RATINGS（Ta=25℃）
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
-60
-60
-5
-500
150
150
-55½150
Unit
V
V
V
mA
mW
℃
℃
MARKING
Type Name
A ・W
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
V
（BR）CEO
V
（BR）CBO
V
（BR）EBO
I
CBO
I
EBO
h
FE
V
CE（sat）
V
BE（sat）
f
T
C
ob
Parameter
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
B to E saturation voltage
Gain band width product
Collector output capacitance
Test condition
I
C
=-1mA, I
B
=0
I
C
=-10uA, I
E
=0
I
E
=-10uA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-3V, I
C
=0
I
C
=-150mA, V
CE
=-10V
I
C
=-150mA, I
B
=-15mA
I
C
=-150mA, I
B
=-15mA
I
E
=50mA, V
CE
=-20V,f=100MHz
V
CB
=-10V, f=1MHz
Min
-60
-60
-5
－
－
100
－
－
200
－
Limits
Typ
－
－
－
－
－
－
－
－
－
－
Max
－
－
－
-0.1
-0.1
300
-0.4
-1.3
－
8
Unit
V
V
V
uA
uA
－
V
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION
0.12
0.32
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
