〈SMALL-SIGNAL TRANSISTOR〉
ISA1989AU1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(ULTRA SUPER MINI TYPE)
TYPICAL CHARACTERISTICS
Collector dissipation－AMBIENT TEMPERTURE
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT
400
200
VCE=-6V
Collector dissipation Pc (mW)
GAIN BAND WIDTH PRODUCT fT[MHz]
150
300
100
200
50
100
0
0
25
50
75
100
AMBIENT TEMPERTURE Ta (℃)
125
150
0
0.1
1
10
100
EMITTER CURRENT IE[mA]
DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
1000
100
VCE=-6V
COLLECTOR OUTPUT CAPACITANCE Cob[pF]
DC FORWARD CURRENT GAIN hFE
10
100
1
10
-0.1
-1
-10
-100
-1000
0
-0.1
-1
-10
-100
COLLECTOR CURRENT IC[mA]
COMMON EMITTER TRANSFER
COLLECTOR TO BASE VOLTAGE VCB[V]
-50
VCE=-6V
-40
COLLECTOR CURRENT IC[mA]
-30
-20
-10
-0
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
BASE TO EMITTER VOLTAGE VBE[V]
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
