〈SMALL-SIGNAL TRANSISTOR〉
ISA1989AU1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(ULTRA SUPER MINI TYPE)
DESCRIPTION
ISA1989AU1 is a ultra super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
.
0.5
①
②
③
0.3
0.4
1.6
0.8
0.4
OUTLINE DRAWING
Unit：�½��½�
1.6
1.0
FEATURE
● Small collector to emitter saturation voltage.
VCE(sat)=-0.3V max（@ I
C
=-30mA ,I
B
=-1.5mA）
●Excellent linearity of DC forward gain.
0.7
●Super mini package for easy mounting
0.5
0.55
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
JEITA：SC-75A
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
MAXIMUM RATINGS
（Ta=25℃）
Symbol
.
V
CBO
V
CEO
V
EBO
I
O
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
-50
-50
-6
-100
150
＋150
-55�½�＋150
Unit
V
V
V
mA
mW
℃
℃
0�½�0.1
MARKING
.
TR
P
c
T
j
T
stg
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Symbol
V(BR)
CEO
I
CBO
I
EBO
hFE
hFE
VCE(sat)
fT
Cob
I
C
=-100μA ,R
V
V
V
V
CB
EB
Test conditions
BE
Limits
Min
-50
-
-
※
120
70
-
-
-
Typ
-
-
-
-
-
-
200
2.5
Max
-
-0.5
-0.5
560
-
-0.3
-
-
0.15
Unit
V
μA
μA
=∞
=-50V, I
E
=0mA
=-4V, I
C
=0mA
=-6V, I
C
=-1mA
=-6V, I
C
=-0.1mA
=-6V, I
E
=10mA
=-6V, I
E
=0,f=1MHz
CE
CE
I
C
=-30mA ,I
B
=-1.5mA
V
V
CE
CE
V
MHz
pF
※） It shows hFE classification in below table.
Item
hFE item
Q
120�½�270
R
180�½�390
S
270�½�560
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
