TYPICAL CHARACTERISTICS
ID -VDS(Low voltage region)
Ta=25℃
ID -VDS
Ta=25℃
1.0V
100
1
0.8
0.6
0.4
0.2
0
1.6V
1.5V
0.95V
80
60
40
20
1.4V
1.3V
0.9V
1.2V
0.85V
1.1V
VGS=1.0V
VGS=0.8V
0
0
5
10
0
0.1
0.2
0.3
0.4
0.5
Drain-Source voltage VDS (V)
Drain-Source voltage VDS (V)
ID -VGS
IDR -VDS
100
10
1
1000
100
10
Ta=25℃
VDS=10V
Ta=25℃
VGS=0V
1
-0
-0.5
-1
-1.5
-2
0
1
2
3
4
5
Drain-Source voltage VDS (V)
Gate-Source voltage VGS (V)
|Yfs| - ID
VDS(ON) - ID
1000
100
10
1000
100
10
Ta=25℃
VDS=10V
Ta=25℃
VGS=4V
1
1
1
10
100
1000
1
10
Drain currentꢀID (mA)
100
Drain current ID (mA)
t - ID
C - VDS
10000
1000
100
10
100
Ta=25℃
toff
tf
Ciss
10
Coss
ton
tr
Ta=25℃
VGS=0V
1
1
0.1
1
10
Drain-Source voltage VDS (V)
100
0.1
1 10
Drain current ID (mA)
100
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
