ＩＮＫ0001AＸ SERIES
High speed switching
Silicon N-channel MOSFET
MAXIMUM RATING（Ｔａ＝２５℃）
RATING
INK0001AU1 INK0001AM1
SYMBOL
PARAMETER
UNIT
INK0001AT2
125（※）
INK0001AC1
ＶDSS
ＶGSS
Drain-source voltage
Gate-source voltage
Drain current
50
V
V
±8
100
Ｉ
mA
D
Total
power
dissipation
ＰＤ
150
200
mW
（Ta=25℃）
Ｔch
Channel temperature
+125
+150
℃
℃
Ｔｓｔｇ
Range of Storage temperature
-55～+125
-55～+150
ELECTRICAL CHARACTERISTICS（Ｔａ＝２５℃）
※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
LIMIT
SYMBOL
PARAMETER
TEST CONDITION
UNIT
MIN
50
-
TYP
-
MAX
-
Drain-source breakdown voltage I D=100μA, V GS=0V
V
μA
μA
V
V
(BR)DSS
Gate-source leak current
Zero gate voltage drain current
Gate threshold voltage
V GS=±5V, VDS=0V
DS=50V ,VGS=0V
-
±0.5
50
I
GSS
DSS
V
-
-
I
I D=250μA, V DS= V GS
V DS=10V, I D=0.1A
0.6
-
-
1.2
-
V
th
Forward transfer admittance
250
mS
| Yfs
|
Static drain-source on-state
resistance
I D=100mA, V GS=4.0V
-
3.5
-
Ω
RDS(ON)
Input capacitance
V DS=10V, V GS=0V,f=1MHz
V DS=10V, V GS=0V,f=1MHz
-
-
-
-
24
5
-
-
-
-
pF
pF
C
iss
Output capacitance
Coss
V
DD=5V , I D=10mA
11
50
t
ON
Switching time
ns
V GS=0～5V
t
OFF
Switching time test condition
test circuit
OUT
5V
0V
90%
IN
5V
input
waveform
RL
10%
50Ω
0
VDD
10μs
VDD
10%
VDD=5V
output
waveform
D.U.≦1%
Common source
Ta=25℃
90%
tr
VDS(ON）
tf
toff
ton
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
