TYPICAL CHARACTERISTICS
ID -VDS
ID -VDS(Low voltage region)
Ta=25℃
Ta=25℃
-1.0V
-100
-1
-0.8
-0.6
-0.4
-0.2
-0
-1.9V
-1.8V
-0.95V
-0.9V
-0.85V
-80
-60
-40
-20
-0
-1.7V
-1.6V
VGS=-0.8V
-1.5V
-1.4V
VGS=-1.3V
-0
-2
-4
-6
-8
-10
-0
-0.1
-0.2
-0.3
-0.4
-0.5
Drain-Source voltage VDS (V)
Drain-Source voltage VDS (V)
IDR -VDS
ID -VGS
-100
-10
-1
-1000
-100
-10
Ta=25℃
VDS=-10V
Ta=25℃
VGS=0V
-1
0
0.5
1
1.5
2
-0
-1
-2
-3
-4
-5
Drain-Source voltage VDS (V)
Gate-Source voltage VGS (V)
|Yfs| - ID
VDS(ON) -ID
-1000
-100
-10
1000
100
10
Ta=25℃
VGS=-4V
Ta=25℃
VDS=-10V
1
-1
-1
-10
-100
-1000
-1
-10
-100
Drain current ID (mA)
Drain currentꢀID (mA)
C - VDS
t - ID
10000
1000
100
10
100
10
1
Ta=25℃
toff
tf
Ciss
Coss
ton
tr
Ta=25℃
VGS=0V
1
-0.1
-1
-10
-100
-0.1
-1
-10
-100
Drain current ID (mA)
Drain-Source voltage VDS (V)
ISAHAYA ELECTRONICS CORPORATION