ＩＮJ0002AＸ SERIES
・PRELIMINARY
Notice: This is not a final specification
Some parametric are subject to change.
High speed switching
Silicon P-channel MOSFET
MAXIMUM RATING（Ｔａ＝２５℃）
RATING
INJ0002AU1 INJ0002AM1
SYMBOL
PARAMETER
UNIT
INJ0002AT2
125（※）
INJ0002AC1
ＶDSS
ＶGSS
Drain-source voltage
Gate-source voltage
Drain current
-30
±8
V
V
Ｉ
-200
mA
D
Total
power
dissipation
ＰＣ
150
200
mW
（Ta=25℃）
Ｔch
Channel temperature
+125
+150
℃
℃
Ｔｓｔｇ
Range of Storage temperature
-55～+125
-55～+150
ELECTRICAL CHARACTERISTICS（Ｔａ＝２５℃）
※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
LIMIT
SYMBOL
PARAMETER
TEST CONDITION
UNIT
MIN
-30
-
TYP
-
MAX
-
Drain-source breakdown voltage I D=-100μA, VGS=0V
V
μA
μA
V
V
(BR)DSS
Gate-source leak current
Zero gate voltage drain current
Gate threshold voltage
V GS=±5V, VDS=0V
DS=-30V ,VGS=0V
-
±0.5
-50
-1.2
-
I
GSS
DSS
V
-
-
I
I D=-250μA, V DS= V GS
V DS=-10V, I D=-0.1A
-0.6
-
-
V
th
Forward transfer admittance
220
mS
| Yfs
|
Static drain-source on-state
resistance
I D=-100mA, V GS=-4.0V
-
3
-
Ω
RDS(ON)
Input capacitance
V DS=-10V, V GS=0V,f=1MHz
V DS=-10V, V GS=0V,f=1MHz
-
-
-
-
35
7.3
14
-
-
-
-
pF
pF
C
iss
Output capacitance
Coss
V
DD=-5V , I D=-10mA
t
ON
Switching time
ns
V GS=0～-5V
100
t
OFF
Switching time test condition
test circuit
OUT
0V
10%
IN
0
input
waveform
RL
90%
50Ω
-5V
-5V
VDD
10μs
VDS(ON）
90%
VDD=-5V
D.U.≦1%
Common source
Ta=25℃
output
waveform
10%
tr
VDD
tf
toff
ton
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
