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INC6006AS1 参数 Datasheet PDF下载

INC6006AS1图片预览
型号: INC6006AS1
PDF下载: 下载PDF文件 查看货源
内容描述: 低频AMPLIFY应用硅NPN外延型 [FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE]
分类和应用:
文件页数/大小: 4 页 / 151 K
品牌: ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
 浏览型号INC6006AS1的Datasheet PDF文件第2页浏览型号INC6006AS1的Datasheet PDF文件第3页浏览型号INC6006AS1的Datasheet PDF文件第4页  
<SMALL-SIGNAL TRANSISTOR>
PRELIMINARY
Notice:This is not a final specification
Some parametric are subject to change.
INC6006AS1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
INC6006AS1 is a silicon NPN transistor.
It is designed with high voltage.
OUTLINE DRAWING
4.0
7.5MAX
1.0
1.0
0.1
0.45
2.5
2.5
0.4
UNIT:½½
FEATURE
・Small package for easy mounting.
・High voltage V
CEO
= 160V
・Low voltage V
CE(sat)
= 0.2V(MAX)
・Complementary : INA6006AS1
14.0
APPLICATION
High voltage switching.
2.5
TERMINAL CONNECTOR
①:EMITTER
②:COLLECTOR
③:BASE
JEITA:-
JEDEC:-
MAXIMUM RATING(Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
I
CM
C
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Peak collector current
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
180
6
160
200
100
600
+150
-55½+150
UNIT
V
V
V
mA
mA
mW
13.0MIN
3.0
MARKING
Type Name
C06
□□
W
LOT No
h
FE
ITEM
P
C
T
j
T
stg
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
V
(BR)CBO
V
(BR)EBO
V
(BR)CEO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
Cob
Cib
PARAMETER
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
DC forward current gain3
C to E saturation voltage1
C to E saturation voltage2
B to E saturation voltage1
B to E saturation voltage2
Gain bandwidth product
Collector output capacitance
Collector input capacitance
TEST CONDITIONS
I
C
=100μA,I
E
=0A
I
E
=10μA,I
C
=0A
I
C
=1mA,R
BE
=∞
V
CB
=120V,I
E
=0A
V
EB
=4V,I
C
=0A
V
CE
=5V,I
C
=1mA
V
CE
=5V,I
C
=10mA
V
CE
=5V,I
C
=50mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
V
CE
=10V,I
E
=-10mA
V
CB
=10V,I
E
=0A,f=1MHz
V
EB
=0.5V,I c=0A,f=1MHz
MIN
180
6
160
-
-
72
72
27
-
-
-
-
100
-
-
LIMITS
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
1.7
-
MAX
-
-
-
100
100
-
330
-
0.15
0.2
1.0
1.0
300
6
20
UNIT
V
V
V
nA
nA
-
-
-
V
V
V
V
MHz
pF
pF
ISAHAYA ELECTRONICS CORPORATION