PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
INA6006AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
TYPICIAL CHARACTERISTICS
COLLECTOR DISSIPATION
VS AMBIENT TEMPERATURE
1000
85℃
VCE=-5V
DC forward current gain VS. Collector current
300
COLLECTOR DISSIPATION Pc (mW)
250
200
150
100
50
0
0
50
100
150
AMBIENT TEMPERATURE Ta (℃)
COMMON EMITTER TRANSFER
-100
VCE=-5V
DC forward current gain hFE
25℃
100
-40℃
10
-0.01
-0.1
-1
-10
-100
Collector current IC(mA)
COLLECTOR TO EMITTERSATURATION
VOLTAGE VS. COLLECTOR CURRENT
COLLECTOR TO EMITTERSATURATION VOLTAGE
VCE(sat) （V)
-1
IC/IB=10
Collector current IC(mA)
-10
85℃
85℃
25℃
-1
25℃
-40℃
-0.1
-0.1
-40℃
-0.01
-0
-0.2
-0.4
-0.6
-0.8
-1
BASE TO EMITTER VOLTAGE VBE (V)
-0.01
-0.01
-0.1
-1
-10
-100
COLLECTOR CURRENT IC(mA)
-10
BASE TO EMITTERSATURATION VOLTAGE
VBE(sat) （V)
BASE TO EMITTERSATURATION VOLTAGE
VS. COLLECTOR CURRE
-70
IC/IB=10
COMMON EMITTER OUTPUT
COLLECTOR CURRENT IC (mA)
-60
-50
-40
Ta=25℃
IB=300uA
IB=250uA
IB=200uA
-40℃
-1
25℃
-30
IB=150uA
-20
-10
-0
IB=100uA
IB=50uA
IB=0
85℃
-0.1
-0.01
-0.1
-1
-10
-100
-0
-5
-10
-15
-20
COLLECTOR CURRENT IC(mA)
COLLECTOR EMITTER VOLTAGE VCE (V)
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
