欢迎访问ic37.com |
会员登录 免费注册
发布采购

INA6006AC1 参数 Datasheet PDF下载

INA6006AC1图片预览
型号: INA6006AC1
PDF下载: 下载PDF文件 查看货源
内容描述: 低频AMPLIFY申请PNP硅外延型 [FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE]
分类和应用:
文件页数/大小: 4 页 / 165 K
品牌: ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
 浏览型号INA6006AC1的Datasheet PDF文件第2页浏览型号INA6006AC1的Datasheet PDF文件第3页浏览型号INA6006AC1的Datasheet PDF文件第4页  
PRELIMINARY
Notice:This is not a final specification
Some parametric are subject to change.
INA6006AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
INA6006AC1 is a silicon PNP transistor.
It is designed with high voltage.
OUTLINE DRAWING
0.65
2.8
1.5
0.65
UNIT:mm
0.95
0.95
・High voltage V
CEO
= -150V
・Low voltage VCE(sat) = -0.5V(MAX)
・Complementary : INC6006AC1
2.8
1.90
・Small package for easy mounting.
APPLICATION
1.1
0.8
High voltage switching.
0.13
0½0.1
Terminal Connector
①:Base
②:Emitter
③:Collector
JEITA:SC-59
JEDEC: Similar to TO-236
MAXIMUM RATING(Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
I
CM
C
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Peak collector current
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
-160
-5
-150
-200
-100
200
500(*)
+150
-55½+150
UNIT
V
V
V
mA
mA
mW
MARKING
Type Name
P
C
T
j
T
stg
AHE
*Mounted on glass epoxy board(46mm×19mm×1mm)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
V
(BR)CBO
V
(BR)EBO
V
(BR)CEO
I
CBO
I
EBO
½FE1
½FE2
½FE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VBE(on)
fT
Cob
PARAMETER
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
DC forward current gain3
C to E saturation voltage1
C to E saturation voltage2
B to E saturation voltage1
B to E saturation voltage2
B to E on voltage
Gain bandwidth product
Collector output capacitance
TEST CONDITIONS
I
C
=-100μA,I
E
=0mA
I
E
=-10μA,I
C
=0mA
I
C
=-1mA,R
BE
=∞
V
CB
=-120V,I
E
=0mA
V
EB
=-3V,I
C
=0mA
VCE=-5V,I
C
=-1mA
VCE=-5V,I
C
=-10mA
VCE=-5V,I
C
=-50mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
VCE=-5V,I
C
=-10mA
VCE=-10V,I
E
=10mA
VCB=-10V,I
E
=0mA,f=1MHz
MIN
-160
-5
-150
-
-
45
90
45
-
-
-
-
-
100
-
LIMITS
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.8
0.4
FEATURE
MAX
-
-
-
-100
-100
-
270
-
-0.2
-0.5
-1.0
-1.0
-0.77
300
6
UNIT
V
V
V
nA
nA
-
-
-
V
V
V
V
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION