〈SMALL-SIGNAL TRANSISTOR〉
INA5001AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
INA5001AP1 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for relay draive or Power supply application.
.
OUTLINE DRAWING
4.6 MAX
1.6
1.5
Unit：�½��½�
●Super mini package for easy mounting
● High collector current
● High voltage
I
C
=-1A
0.8 MIN
● Low VCE(sat) V
CE(sat)
=-0.5 V max(@I
C
=-500mA/I
B
=-50mA)
E
C
0.53
MAX
B
4.2 MAX
FEATURE
2.5
0.4
0.48 MAX
V
CEO
=-50V
1.5
3.0
マーキング
MARKING
APPLICATION
Relay drive, Power supply for audio equipment, VTR , etc
TERMINAL CONNECTER
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
-50
-5
-50
-1
-2
500
＋150
-55�½�＋150
Unit
V
V
V
A
A
mW
℃
℃
①：BASE
電極接続
Ｃ: コレクタ
Ｅ:
②：EMITTER
エミッタ
③：COLLECTOR
Ｂ: ベース
JEITA:SC-62
JEDEC:SOT-89
EIAJ : SC-62
JEDEC :
MARKING
TYPE NAME
A Z
W
LOT №
hFE
Limits
Min
-50
-5
-50
-0.1
-0.1
160
380
-0.5
120
12
Typ
Max
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain bandwidth product
Collector output capacitance
Symbol
V(BR)
CBO
V(BR)
EBO
V(BR)
CEO
I
CBO
I
EBO
hFE
V
CE(sat)
fT
Cob
Test conditions
I
C
=-10μA，I
E
=0mA
I
E
=-10μA，I
C
=0mA
I
C
=-1mA，R
BE
=∞
V
CB
=-50V，I
E
=0mA
V
EB
=-5V，I
C
=0mA
V
CE
=-4V，I
C
=-0.1A
I
C
=-500mA，I
B
=-50mA
V
CE
=-2V，I
E
=500mA
V
CB
=-10V，I
E
=0mA，f=1MHz
Unit
V
V
V
μA
μA
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
