〈SMALL-SIGNAL TRANSISTOR〉
2SC5621
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
2SC5621 is a super mini package resin sealed silicon NPN
epitaxial transistor.It is designed for high frequency
application.
OUTLINE DRAWING
1.6
0.8
Unit:mm
0.4
0.4
FEATURE
・High gain bandwidth product.
fT=4.5GHz
・High gain,low noise.
・Can operate at low voltage.
・Super mini package for easy mounting.
1
3
2
APPLICATION
For TV tuners,high frequency amplifier,celluar phone
system.
TERMINAL CONNECTOR
: BASE
: EMITTER
EIJA:
: COLLECTOR
1
2
3
MAXIMUM RATINGS (Ta=25℃)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temprature
Ratings
20
12
3
50
100
+125
-55~+125
Unit
V
V
V
mA
mW
℃
℃
MARKING
G
TYPE NAME
W
h
FE
ITEM
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
I
I
CBO
EBO
Parameter
Collector cut off current
Emitter cut off current
DC forward current gain
Gain bandwidth product
2
Test conditions
Min
Limits
Typ
Max
Unit
1.0
1.0
μA
μA
V
CB
=10V, I
E
=0mA
V
EB
=1V, I
C
=0mA
V
CE
=5V, I
C
=20mA
V
CE
=5V, I
E
=20mA
V
CB
=5V, I
E
=0mA, f =1MHz
V
CE
=5V, I
C
=20mA, f =1GHz
V
CE
=5V, I
C
=5mA, f =1GHz
7.5
50
4.5
1.0
9.0
1.5
h
FE
f
T
C
ob
S
21
NF
250
GHz
pF
dB
dB
Collector output capacitance
Insertion power gain
Noise figure
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
