Si4410DYPbF
2400
2000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 10A
V
DS
= 24V
V
DS
= 15V
16
C, Capacitance (pF)
1600
Ciss
12
1200
Coss
800
8
400
4
Crss
0
1
10
100
0
0
10
20
30
40
50
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 150
°
C
T
J
= 25
°
C
1
I
D
, Drain Current (A)
100
10us
10
100us
1ms
0.1
0.4
V
GS
= 0 V
0.5
0.6
0.7
0.8
0.9
1.0
1
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF [ INTERNATIONAL RECTIFIER ]
