Si4410DYPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
30
–––
–––
–––
1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
0.029 ––– V/°C Reference to 25°C, I
D
= 1mA
0.010 0.0135
V
GS
= 10V, I
D
= 10A
Ω
0.015 0.020
V
GS
= 4.5V, I
D
= 5.0A
––– –––
V
V
DS
= V
GS
, I
D
= 250µA
35 –––
S
V
DS
= 15V, I
D
= 10A
––– 1.0
V
DS
= 30V, V
GS
= 0V
µA
––– 25
V
DS
= 30V, V
GS
= 0V, T
J
= 55°C
––– -100
V
GS
= -20V
nA
––– 100
V
GS
= 20V
30
45
I
D
= 10A
5.4 –––
nC V
DS
= 15V
6.5 –––
V
GS
= 10V, See Fig. 10
11 –––
V
DD
= 25V
7.7 –––
I
D
= 1.0A
ns
38 –––
R
G
= 6.0Ω
44 –––
R
D
= 25Ω,
1585 –––
V
GS
= 0V
739 –––
pF
V
DS
= 15V
106 –––
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Parameter
Continuous Source Current
(Diode Conduction)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
0.7
50
2.3
A
50
1.1
80
V
ns
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.3A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.3A
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 8.0mH
R
G
= 25Ω, I
AS
= 10A. (See Figure 15)
Pulse width
≤
300µs; duty cycle
≤
2%.
When mounted on FR4 Board, t
≤10
sec
I
SD
≤2.3A,
di/dt
≤
130A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
2
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