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IRS2003STRPBF 参数 Datasheet PDF下载

IRS2003STRPBF图片预览
型号: IRS2003STRPBF
PDF下载: 下载PDF文件 查看货源
内容描述: 设计为引导操作浮动通道 [Floating channel designed for bootstrap operation]
分类和应用: 外围驱动器驱动程序和接口接口集成电路光电二极管
文件页数/大小: 14 页 / 474 K
品牌: INFINEON [ Infineon ]
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IRS2003(S)PbF  
Dynamic Electrical Characteristics  
V
(V , V ) = 15 V, C = 1000 pF and T = 25 °C unless otherwise specified.  
BIAS CC BS  
L
A
Symbol  
Definition  
Turn-on propagation delay  
Turn-off propagation delay  
Turn-on rise time  
Min. Typ. Max. Units Test Conditions  
t
680  
150  
70  
820  
220  
170  
90  
V = 0 V  
S
on  
t
V = 200 V  
S
off  
t
r
t
f
Turn-off fall time  
35  
ns  
Deadtime, LS turn-off to HS turn-on &  
HS turn-on to LS turn-off  
400  
520  
650  
60  
DT  
MT  
Delay matching, HS & LS turn-on/off  
Static Electrical Characteristics  
V
(V , V ) = 15 V and T = 25 °C unless otherwise specified. The V , V  
and I parameters are referenced to  
IN TH, IN  
BIAS CC BS  
A
COM. The V and I parameters are referenced to COM and are applicable to the respective output leads: HO or LO.  
O
O
Symbol  
Definition  
Min. Typ. Max. Units Test Conditions  
ꢀꢁꢂ  
ꢀꢁꢂ  
V
Logic “1” (HIN) & Logic “0” (  
Logic “0” (HIN) & Logic “1” (  
High level output voltage, V  
) input voltage  
) input voltage  
2.5  
0.8  
0.2  
0.1  
50  
IH  
V
= 10 V to 20 V  
CC  
V
IL  
V
V
OH  
- V  
BIAS O  
0.05  
0.02  
I
= 2 mA  
O
V
OL  
Low level output voltage, V  
O
I
LK  
Offset supply leakage current  
V
= V = 200 V  
B S  
I
Quiescent V supply current  
BS  
30  
55  
QBS  
V
= 0 V or 5 V  
IN  
I
Quiescent V  
supply current  
CC  
150  
3
270  
10  
µA  
QCC  
ꢀꢁꢂ  
ꢀꢁꢂ  
I
Logic “1” input bias current  
Logic “0” input bias current  
HIN = 5 V,  
= 0 V  
= 5 V  
IN+  
I
IN-  
5
HIN = 0 V,  
V
supply undervoltage positive going  
CC  
V
8
8.9  
8.2  
9.8  
CCUV+  
threshold  
supply undervoltage negative going  
CC  
V
V
V
7.4  
130  
270  
9
CCUV-  
threshold  
V
O
= 0 V,V =V  
IN IH  
I
Output high short circuit pulsed current  
Output low short circuit pulsed current  
290  
600  
O+  
PW 10 µs  
mA  
V
O
= 15 V, V = V  
IN  
IL  
I
O-  
PW 10 µs  
www.irf.com  
3
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