IRLR/U120NPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min. Typ. Max. Units
Conditions
100 ––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.12 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.185
V
GS
= 10V, I
D
= 6.0A
––– ––– 0.225 W
V
GS
= 5.0V, I
D
= 6.0A
––– ––– 0.265
V
GS
= 4.0V, I
D
= 5.0A
1.0
––– 2.0
V
V
DS
= V
GS
, I
D
= 250µA
3.1
––– –––
S
V
DS
= 25V, I
D
= 6.0A
––– ––– 25
V
DS
= 100V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
––– ––– 100
V
GS
= 16V
nA
––– ––– -100
V
GS
= -16V
––– ––– 20
I
D
= 6.0A
––– ––– 4.6
nC
V
DS
= 80V
––– ––– 10
V
GS
= 5.0V, See Fig. 6 and 13
–––
4.0 –––
V
DD
= 50V
–––
35 –––
I
D
= 6.0A
ns
–––
23 –––
R
G
= 11Ω, V
GS
= 5.0V
–––
22 –––
R
D
= 8.2Ω, See Fig. 10
Between lead,
4.5
nH
6mm (0.25in.)
G
from package
––– 7.5 –––
and center of die contact
––– 440 –––
V
GS
= 0V
–––
97 –––
pF
V
DS
= 25V
–––
50 –––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
10
––– –––
showing the
A
G
integral reverse
––– –––
35
p-n junction diode.
S
––– ––– 1.3
V
T
J
= 25°C, I
S
= 6.0A, V
GS
= 0V
––– 110 160
ns
T
J
= 25°C, I
F
=6.0A
––– 410 620
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 4.7mH
R
G
= 25Ω, I
AS
= 6.0A. (See Figure 12)
T
J
≤
175°C
Pulse width
≤
300µs; duty cycle
≤
2%.
This is applied for I-PAK, L
S
of D-PAK is measured between lead and
center of die contact
I
SD
≤
6.0A, di/dt
≤
340A/µs, V
DD
≤
V
(BR)DSS
,
Uses IRL520N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
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