IRLR/U024NPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min. Typ. Max. Units
Conditions
55
––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.061 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.065
V
GS
= 10V, I
D
= 10A
––– ––– 0.080
Ω
V
GS
= 5.0V, I
D
= 10A
––– ––– 0.110
V
GS
= 4.0V, I
D
= 9.0A
1.0
––– 2.0
V
V
DS
= V
GS
, I
D
= 250µA
8.3
––– –––
S
V
DS
= 25V, I
D
= 11A
––– ––– 25
V
DS
= 55V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
––– ––– 100
V
GS
= 16V
nA
–––
––– -100
V
GS
= -16V
––– ––– 15
I
D
= 11A
––– ––– 3.7
nC
V
DS
= 44V
–––
––– 8.5
V
GS
= 5.0V, See Fig. 6 and 13
–––
7.1 –––
V
DD
= 28V
–––
74 –––
I
D
= 11A
ns
–––
20 –––
R
G
= 12Ω, V
GS
= 5.0V
–––
29 –––
R
D
= 2.4Ω, See Fig. 10
Between lead,
4.5
nH
6mm (0.25in.)
G
from package
––– 7.5 –––
and center of die contact
––– 480 –––
V
GS
= 0V
––– 130 –––
pF
V
DS
= 25V
–––
61 –––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 17
showing the
A
G
integral reverse
––– –––
72
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
––– 60
90
ns
T
J
= 25°C, I
F
= 11A
––– 130 200
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width
≤
300µs; duty cycle
≤
2%.
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact
V
DD
= 25V, starting T
J
= 25°C, L = 790µH
R
G
= 25Ω, I
AS
= 11A. (See Figure 12)
T
J
≤
175°C
I
SD
≤
11A, di/dt
≤
290A/µs, V
DD
≤
V
(BR)DSS
,
Uses IRLZ24N data and test conditions.
2
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