PD- 95081A
IRLR024NPbF
IRLU024NPbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
Logic-Level Gate Drive
Surface Mount (IRLR024N)
Straight Lead (IRLU024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
D
V
DSS
= 55V
R
DS(on)
= 0.065Ω
G
S
I
D
= 17A
Description
Fifth Generation HEXFET
®
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the lowest possible on-
resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient device for use in
a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D-Pak
I-Pak
IRLR024NPbF IRLU024NPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
17
12
72
45
0.3
± 16
68
11
4.5
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
3.3
50
110
Units
°C/W
www.irf.com
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
1
12/6/04
IRF [ INTERNATIONAL RECTIFIER ]
