IRLMS1503PbF-1
20
16
12
8
350
300
250
200
150
100
50
I
D
= 2.2A
V
= 0V,
f = 1MHz
gd , ds
GS
C
= C + C
C
SHORTED
iss
gs
V
V
= 24V
= 15V
DS
DS
C
= C
gd
rss
C
= C + C
ds
oss
gd
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE9
0
0
0
2
4
6
8
10
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
10
°
T = 150 C
J
°
T = 25 C
J
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
V
= 0 V
J
GS
1.4
0.1
0.4
0.1
0.6
0.8
1.0
1.2
1.6
1
10
100
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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June 30, 2014
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