IRLMS1503PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
VGS = 0V, ID = 250µA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient 0.037 V/°C Reference to 25°C, ID = 1mA
0.100
0.20
1.0
1.1
1.0
25
-100
100
6.4 9.6
1.1 1.7
1.9 2.8
4.6
4.4
10
2.0
210
90
32
VGS = 10V, ID = 2.2A
VGS = 4.5V, ID = 1.1A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 1.1A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
ID = 2.2A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = 24V
VGS = 10V, See Fig. 6 and 9
VDD = 15V
RiseTime
ID = 2.2A
ns
pF
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 6.0Ω
RD = 6.7Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
1.7
18
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
1.2
V
TJ = 25°C, IS = 2.2A, VGS = 0V
TJ = 25°C, IF = 2.2A
36
39
54
58
ns
nC
Qrr
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ISD ≤ 2.2A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS
,
Surface mounted on FR-4 board, t ≤ 5sec.
TJ ≤ 150°C
2
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June 30, 2014
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