IRLML6401GPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-12 ––– –––
V
V
GS
= 0V, I
D
= -250µA
––– -0.007 ––– V/°C Reference to 25°C, I
D
= -1mA
––– ––– 0.050
V
GS
= -4.5V, I
D
= -4.3A
Ω
––– 0.085
V
GS
= -2.5V, I
D
= -2.5A
––– 0.125
V
GS
= -1.8V, I
D
= -2.0A
-0.40 -0.55 -0.95
V
V
DS
= V
GS
, I
D
= -250µA
8.6 ––– –––
S
V
DS
= -10V, I
D
= -4.3A
––– ––– -1.0
V
DS
= -12V, V
GS
= 0V
µA
––– ––– -25
V
DS
= -9.6V, V
GS
= 0V, T
J
= 55°C
––– ––– -100
V
GS
= -8.0V
nA
––– ––– 100
V
GS
= 8.0V
––– 10
15
I
D
= -4.3A
––– 1.4 2.1
nC V
DS
= -10V
––– 2.6 3.9
V
GS
= -5.0V
––– 11 –––
V
DD
= -6.0V
ns
––– 32 –––
I
D
= -1.0A
––– 250 –––
R
D
= 6.0Ω
––– 210 –––
R
G
= 89Ω
––– 830 –––
V
GS
= 0V
––– 180 –––
pF V
DS
= -10V
––– 125 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
22
8.0
-1.3
A
-34
-1.2
33
12
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.3A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.3A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
Pulse width
≤
300µs; duty cycle
≤
2%.
Starting T
J
= 25°C, L = 3.5mH
R
G
= 25Ω, I
AS
= -4.3A.
2
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