IRLML6346TRPbF
10000
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 3.4A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
= C
rss
oss
gd
= C + C
V
= 24V
= 15V
= 6.0V
ds
gd
DS
V
DS
1000
100
10
V
DS
C
iss
6.0
C
C
oss
4.0
rss
2.0
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
1
2
3
4
5
6
7
8
V
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs.
Fig 6. Typical Gate Charge vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100μsec
T
= 150°C
J
1msec
10msec
T
= 25°C
J
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1.0
10
100
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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