欢迎访问ic37.com |
会员登录 免费注册
发布采购

IRLML6346PBF 参数 Datasheet PDF下载

IRLML6346PBF图片预览
型号: IRLML6346PBF
PDF下载: 下载PDF文件 查看货源
内容描述: HEXFET®功率MOSFET [HEXFET Power MOSFET]
分类和应用:
文件页数/大小: 10 页 / 218 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
 浏览型号IRLML6346PBF的Datasheet PDF文件第2页浏览型号IRLML6346PBF的Datasheet PDF文件第3页浏览型号IRLML6346PBF的Datasheet PDF文件第4页浏览型号IRLML6346PBF的Datasheet PDF文件第5页浏览型号IRLML6346PBF的Datasheet PDF文件第6页浏览型号IRLML6346PBF的Datasheet PDF文件第7页浏览型号IRLML6346PBF的Datasheet PDF文件第8页浏览型号IRLML6346PBF的Datasheet PDF文件第9页  
PD - 97584A
IRLML6346TRPbF
V
DS
V
GS Max
R
DS(on) max
(@V
GS
= 4.5V)
HEXFET
®
Power MOSFET
30
± 12
63
80
V
V
m
m
6 
* 
 '
Micro3
TM
(SOT-23)
IRLML6346TRPbF
R
DS(on) max
(@V
GS
= 2.5V)
Application(s)
Load/
System Switch
Features and Benefits
Features
Industry-standard SOT-23 Package
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer Qualification
Benefits
results in Multi-vendor compatibility
Ö
Environmentally friendly
Increased Reliability
Absolute Maximum Ratings
Symbol
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
30
3.4
2.7
17
1.3
0.8
0.01
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Symbol
R
JA
R
JA
Parameter
Junction-to-Ambient
e
Typ.
–––
–––
Max.
100
99
Units
°C/W
Junction-to-Ambient (t<10s)
f
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes

through
„
are on page 10
www.irf.com
1
03/09/12