IRL3713/S/LPbF
14
12
10
8
I
D
=
30A
100000
V
V
V
= 24V
= 15V
= 6V
DS
DS
DS
V
C
= 0V,
f = 1 MHZ
GS
= C + C
,
C
ds
SHORTED
iss
gs
gd
C
= C
rss
gd
C
= C + C
oss
ds
gd
10000
1000
100
Ciss
Coss
6
Crss
4
2
0
0
40
80
120
160
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
10000
1000
100
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
10us
100us
1ms
°
T = 25 C
J
1
°
= 25 C
T
T
C
J
°
= 175
C
10ms
V
= 0 V
Single Pulse
GS
1.4
10
0.1
0.2
1
10
100
0.4
V
0.6
0.8
1.0
1.2
1.6
V
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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