IRL3713/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min Typ Max Units
30 ––– –––
––– 0.027 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
V
∆
∆
V
(BR)DSS/ TJ
RDS(on)
VGS(th)
Breakdown Voltage Temp. Coefficient
–––
–––
1.0
2.6
3.3
3.0
4.0
2.5
50
VGS = 10V, ID = 38A
mΩ
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
V
V
V
GS = 4.5V, ID = 30A
DS = VGS, ID = 250µA
DS = 30V, VGS = 0V
DS = 24V, VGS = 0V
–––
–––
–––
–––
–––
–––
V
–––
–––
–––
–––
–––
IDSS
20
Drain-to-Source Leakage Current
µA
nA
100
200
-200
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min Typ Max Units
Conditions
VDS = 15V, ID = 30A
ID = 30A
76
–––
–––
110
–––
–––
92
S
Qg
–––
–––
–––
75
Qgs
Qgd
QOSS
RG
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Gate Resistance
24
nC VDS = 15V
GS = 4.5V
37
V
61
VGS = 0V, VDS = 15V
0.5
–––
–––
–––
–––
–––
16
3.4
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
VDD = 15V
160
40
ID = 30A
ns
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
VGS = 4.5V
VGS = 0V
57
Ciss
Coss
Crss
Input Capacitance
––– 5890 –––
––– 3130 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 15V
ƒ = 1.0MHz
pF
–––
630
–––
Avalanche Characteristics
Parameter
Typ
–––
–––
Max
Units
mJ
Symbol
EAS
IAR
Single Pulse Avalanche Energy
1530
46
Avalanche Current
A
Diode Characteristics
Symbol
Parameter
Min Typ Max Units
Conditions
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
I
I
–––
––– 260
A
S
Pulsed Source Current
(Body Diode)
integral reverse
–––
––– 1040
SM
p-n junction diode.
–––
–––
–––
–––
–––
–––
0.80
0.68
75
1.3
–––
110
210
120
240
T = 25°C, I = 30A, V = 0V
J S GS
V
t
Diode Forward Voltage
V
SD
T = 125°C, I = 30A, V = 0V
GS
J
S
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns T = 25°C, I = 30A, VR = 0V
J F
rr
di/dt = 100A/µs
ns T = 125°C, I = 30A, VR = 20V
Q
t
140
78
nC
rr
rr
J
F
di/dt = 100A/µs
Q
160
nC
rr
2
www.irf.com
INFINEON [ Infineon ]
