IRL3103
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 12
––– ––– 16
VGS = 10V, ID = 34A
VGS = 4.5V, ID = 28A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 34A
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
VGS = 16V
mΩ
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
1.0
22
––– –––
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 33
––– ––– 5.9
––– ––– 17
µA
nA
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -16V
Qg
ID = 34A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 24V
VGS = 4.5V, See Fig. 6 and 13
–––
8.9 –––
VDD = 15V
––– 120 –––
ID = 34A
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
14 –––
9.1 –––
RG = 1.8Ω
VGS = 4.5V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
D
LD
Internal Drain Inductance
––– 4.5 –––
nH
pF
G
LS
Internal Source Inductance
––– 7.5 –––
S
Ciss
Coss
Crss
EAS
Input Capacitance
––– 1650 –––
––– 650 –––
––– 110 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
ƒ = 1.0MHz, See Fig. 5
––– 1320ꢀ130 mJ IAS = 34A, L = 0.22mH
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
64
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
220
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.2
––– 57 86
––– 110 170
V
TJ = 25°C, IS = 34A, VGS = 0V
TJ = 25°C, IF = 34A
ns
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature. (See fig. 11)
ꢀThis is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
Starting TJ = 25°C, L = 220µH
RG = 25Ω, IAS = 34A, VGS=10V (See Figure 12)
ISD ≤ 34A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
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