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IRFZ44V 参数 Datasheet PDF下载

IRFZ44V图片预览
型号: IRFZ44V
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET ( VDSS = 60V , RDS(ON) = 16.5mw ,ID = 55A ) [Power MOSFET(Vdss=60V, Rds(on)=16.5mw, Id=55A)]
分类和应用:
文件页数/大小: 8 页 / 230 K
品牌: INFINEON [ Infineon ]
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IRFZ44V  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
60 ––– –––  
Conditions  
VGS = 0V, ID = 250µA  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient ––– 0.062 ––– V/°C Reference to 25°C, ID = 1mA  
RDS(on)  
VGS(th)  
gfs  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
––– ––– 16.5 mW VGS = 10V, ID = 31A „  
2.0  
24  
––– 4.0  
––– –––  
V
S
VDS = VGS, ID = 250µA  
VDS = 25V, ID = 31A„  
VDS = 60V, VGS = 0V  
VDS = 48V, VGS = 0V, TJ = 150°C  
VGS = 20V  
Forward Transconductance  
––– ––– 25  
––– ––– 250  
––– ––– 100  
––– ––– -100  
––– ––– 67  
––– ––– 18  
––– ––– 25  
IDSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
IGSS  
VGS = -20V  
Qg  
ID = 51A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
nC VDS = 48V  
VGS = 10V, See Fig. 6 and 13 „  
–––  
–––  
–––  
–––  
13 –––  
97 –––  
40 –––  
57 –––  
VDD = 30V  
ID = 51A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 9.1W  
RD = 0.6W, See Fig. 10 „  
Between lead,  
6mm (0.25in.)  
from package  
and center of die contact  
VGS = 0V  
D
LD  
LS  
Internal Drain Inductance  
Internal Source Inductance  
–––  
–––  
4.5 –––  
nH  
G
–––  
7.5  
S
Ciss  
Coss  
Crss  
Input Capacitance  
––– 1812 –––  
––– 393 –––  
––– 103 –––  
Output Capacitance  
VDS = 25V  
Reverse Transfer Capacitance  
pF  
ƒ = 1.0MHz, See Fig. 5  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
showing the  
D
IS  
55  
––– –––  
A
G
ISM  
Pulsed Source Current  
(Body Diode)  
integral reverse  
––– ––– 220  
S
p-n junction diode.  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
Forward Turn-On Time  
––– ––– 2.5  
––– 70 105  
––– 146 219  
V
TJ = 25°C, IS = 51A, VGS = 0V „  
TJ = 25°C, IF = 51A  
ns  
Qrr  
ton  
nC di/dt = 100A/µs „  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
Notes:  
ƒI £51A, di/dt £227A/µs, VDD £V(BR)DSS  
,
Repetitive rating; pulse width limited by  
SD  
max. junction temperature. ( See fig. 11 )  
TJ £175°C  
„Pulse width £300µs; duty cycle £2%.  
‚Starting TJ = 25°C, L = 89µH  
RG = 25W, IAS = 51A. (See Figure 12)  
2
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