IRFZ24N
20
16
12
8
700
I
= 10A
V
C
C
C
= 0V ,
f = 1M Hz
D
G S
= C
+ C
+ C
,
C
SHORTED
V
V
= 44V
= 28V
iss
gs
gd
ds
D S
D S
= C
gd
600
500
400
300
200
100
0
rss
= C
oss
ds
gd
C
C
iss
oss
C
rss
4
FOR TE ST CIRCUIT
S EE FIGURE 13
0
A
A
1
10
100
0
4
8
12
16
20
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
100
10
OPE RATION IN THIS AREA LIM ITE D
BY R DS(on)
T
= 175°C
J
T
= 25°C
J
10µs
100µs
1m s
T
T
= 25°C
= 175°C
S ingle Pulse
C
J
10m s
V
= 0V
G S
A
1
A
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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